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Flanged Pagwawakas

Ang mga flange termination ay naka-install sa dulo ng isang circuit, na sumisipsip ng mga signal na ipinadala sa circuit at pinipigilan ang pagmuni-muni ng signal, sa gayon ay nakakaapekto sa kalidad ng paghahatid ng sistema ng circuit.

Ang flanged terminal ay binuo sa pamamagitan ng hinang ng isang solong lead terminal resistor na may mga flanges at patch.Ang laki ng flange ay karaniwang idinisenyo batay sa kumbinasyon ng mga butas sa pag-install at mga sukat ng paglaban sa terminal.Ang pagpapasadya ay maaari ding gawin ayon sa mga kinakailangan sa paggamit ng customer.


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  • Detalye ng Produkto

    Mga Tag ng Produkto

    Flanged Pagwawakas

    Flanged Pagwawakas
    Pangunahing teknikal na pagtutukoy:

    Na-rate na kapangyarihan:5-1500W;
    Mga materyales sa substrate: BeO, AlN, Al2O3
    Nominal na halaga ng pagtutol:50Ω
    Pagtitiis sa paglaban: ± 5%, ± 2%, ± 1%
    Koepisyent ng temperatura: <150ppm/℃
    Temperatura ng pagpapatakbo:-55~+150℃
    Flange coating: opsyonal na nickel o silver plating
    pamantayan ng ROHS: Sumusunod sa
    Naaangkop na pamantayan: Q/RFTYTR001-2022
    Haba ng lead: L gaya ng tinukoy sa data sheet
    (maaaring ipasadya ayon sa mga kinakailangan ng customer)

    zxczxc1
    kapangyarihan
    (W)
    Dalas
    Saklaw
    Dimensyon (unit: mm) Substratemateryal Configuration Data Sheet
    (PDF)
    A B C D E H G W L J Φ
    5W 6GHz 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 Al2O3  FIG1   RFT50A-05TM1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 Al2O3  FIG1   RFT50A-05TM1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 Al2O3  FIG2   RFT50A-05TM0904(R,L,I)
    10W 4GHz 7.7 5.0 5.1 2.5 1.5 2.5 3.5 1.0 3.0 / 3.1 BeO FIG2   RFT50-10TM7705((R,L))
    6GHz 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 Al2O3  FIG1   RFT50A-10TM1304
    AlN FIG1   RFT50N-10TJ1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 Al2O3  FIG1   RFT50A-10TM1104
    AlN FIG1   RFT50N-10TJ1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 Al2O3 FIG2   RFT50A-10TM0904(R,L,I)
      AlN FIG2   RFT50N-10TJ0904(R,L,I)
    8GHz 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 BeO FIG1   RFT50-10TM1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 BeO FIG1   RFT50-10TM1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 BeO FIG2   RFT50-10TM0904(R,L,I)
    18GHz 7.7 5.0 5.1 2.5 1.5 2.5 3.5 1.0 3.0 / 3.1 BeO FIG2   RFT50-10TM7705I
    20W 4GHz 7.7 5.0 5.1 2.5 1.5 2.5 3.5 1.0 3.0 / 3.1 BeO FIG2   RFT50-20TM7705((R,L))
    6GHz 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 AlN FIG1   RFT50N-20TJ1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 AlN FIG1   RFT50N-20TJ1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 AlN FIG2   RFT50N-20TJ0904(R,L,I)
    8GHz 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 BeO FIG1   RFT50-20TM1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 BeO FIG1   RFT50-20TM1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 BeO FIG2   RFT50-10TM0904(R,L,I)
    18GHz 7.7 5.0 5.1 2.5 1.5 2.5 3.5 1.0 3.0 / 3.1 BeO FIG2   RFT50-10TM7705I
    30W 6GHz 16.0 6.0 13.0 6.0 1.0 2.0 3.0 1.0 5.0 / 2.1 AlN FIG1   RFT50N-30TJ1606
    BeO FIG1   RFT50-30TM1606
    20.0 6.0 14.0 6.0 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN FIG1   RFT50N-30TJ2006
    BeO FIG1   RFT50-30TM2006
    13.0 6.0 10.0 6.0 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN FIG2   RFT50N-30TJ1306(R,L,I)
    3.0 BeO FIG2   RFT50-30TM1306(R,L,I)
    60W 6GHz 16.0 6.0 13.0 6.0 1.0 2.0 3.0 1.0 5.0 / 2.1 AlN FIG1   RFT50N-60TJ1606
    3.2 BeO FIG1   RFT50-60TM1606
    20.0 6.0 14.0 6.0 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN FIG1   RFT50N-60TJ2006
    3.2 BeO FIG1   RFT50-60TM2006
    13.0 6.0 10.0 6.0 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN FIG2   RFT50N-60TJ1306(R,L,I)
    3.2 BeO FIG2   RFT50-60TM1306(R,L,I)
    法兰式终端FIG3,4,5
    kapangyarihan
    (W)
    Dalas
    Saklaw
    Mga sukat (unit: mm) Substrate
    materyal
    Configuration Data Sheet(PDF)
    A B C D E H G W L J Φ
    100W 3GHz 24.8 9.5 18.4 9.5 2.9 4.8 5.5 1.4 6.0 / 3.1 BeO FIG1   RFT50-100TM2595
    4GHz 16.0 6.0 13.0 9.0 1.0 2.0 2.5 1.0 6.0 / 2.1 BeO FIG2   RFT50N-100TM1606
    20.0 6.0 14.0 9.0 1.5 2.5 3.0 1.0 5.0 / 3.2 BeO FIG1   RFT50N-100TJ2006
    24.8 6.0 18.4 6.0 2.8 3.8 4.6 1.0 5.0 / 3.2 BeO FIG1   RFT50-100TM2506
    16.0 10.0 13.0 10.0 1.5 2.6 3.3 1.4 6.0 / 3.2 BeO FIG4   RFT50-100TJ1610(R,L,I)
    23.0 10.0 17.0 10.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO FIG1   RFT50-100TJ2310
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO FIG1   RFT50-100TJ2510
    5GHz 13.0 6.35 10.0 6.35 1.5 2.5 3.2 1.0 5.0 / 3.2 BeO FIG2   RFT50-100TJ1363(R,L,I)
    16.6 6.35 12.0 6.35 1.5 2.5 3.5 1.0 5.0 / 2.5 BeO FIG1   RFT50-100TM1663
    6GHz 16.0 6.0 13.0 8.9 1.0 2.0 2.5 1.0 5.0 / 2.1 AlN FIG1   RFT50N-100TJ1606B
    20.0 6.0 14.0 8.9 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN FIG1   RFT50N-100TJ2006B
    8GHz 20.0 6.0 14.0 8.9 1.5 3.0 3.5 1.0 5.0 / 3.2 AlN FIG1   RFT50N-100TJ2006C
    150W 3GHz 16.0 10.0 13.0 10.0 1.5 2.6 3.3 1.4 6.0 / 3.2 BeO FIG4   RFT50-150TM1610(R,L,I)
    22.0 9.5 14.0 6.35 1.5 2.6 3.0 1.4 5.0 / 4.0 AIN FIG1   RFT50N-150TJ2295
    24.8 9.5 18.4 9.5 2.9 4.8 5.5 1.4 6.0 / 3.1 BeO FIG1   RFT50-150TM2595
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO FIG1   RFT50-150TM2510
    4GHz 16.0 10.0 13.0 10.0 1.5 2.6 3.3 1.4 6.0 / 3.2 BeO FIG4   RFT50-150TJ1610(R,L,I)
    23.0 10.0 17.0 10.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO FIG3   RFT50-150TJ2310
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO FIG1   RFT50-150TJ2510
    200W 3GHz 24.8 9.5 18.4 9.5 2.9 4.8 5.5 1.4 6.0 / 3.1 BeO FIG1   RFT50-200TM2595
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO FIG1   RFT50-200TM2510
    4GHz 16.0 10.0 13.0 10.0 1.5 2.6 3.3 1.4 6.0 / 3.2 BeO FIG2   RFT50-200TM1610(R,L,I)
    23.0 10.0 17.0 10.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO FIG3   RFT50-200TJ2310
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO FIG1   RFT50-150TJ2510
    10GHz 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO FIG1   RFT50-200TM3213B
    250W 3GHz 23.0 10.0 17.0 12.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO FIG3   RFT50-250TM2310
    24.8 10.0 18.4 12.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO FIG1   RFT50-250TM2510
    27.0 10.0 21.0 12.0 2.5 4.0 5.5 1.4 6.0 / 3.2 BeO FIG1   RFT50-250TM2710
    10GHz 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO FIG1   RFT50-250TM3213B
    300W 3GHz 23.0 10.0 17.0 12.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO FIG1   RFT50-300TM2310
    24.8 10.0 18.4 12.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO FIG1   RFT50-300TM2510
    27.0 10.0 21.0 12.0 2.5 4.0 5.5 1.4 6.0 / 3.2 BeO FIG1   RFT50-300TM2710
    10GHz 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO FIG1   RFT50-300TM3213B
    400W 2GHz 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO FIG1   RFT50-400TM3213
    500W 2GHz 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO FIG1   RFT50-500TM3213
    800W 1GHz 48.0 26.0 40.0 26.0 3.0 6.2 6.9 6.0 7.0 12.7 4.2 BeO FIG5   RFT50-800TM4826
    1000W 1GHz 48.0 26.0 40.0 26.0 3.0 6.2 6.9 6.0 7.0 12.7 4.2 BeO FIG5   RFT50-1000TM4826
    1500W 0.8GHz 50.0 78.0 40.0 26.0 5.0 8.2 9.0 6.0 7.0 15.0 4.2 BeO FIG5   RFT50-1500TM5078

    Pangkalahatang-ideya

    Ang flange ay karaniwang gawa sa copper plated nickel o silver processing.Ang substrate ng paglaban ay karaniwang gawa sa beryllium oxide, aluminum nitride, at aluminum oxide na pag-print ayon sa mga kinakailangan sa kapangyarihan at mga kondisyon ng pagwawaldas ng init.

    Ang Flanged Termination, tulad ng Leaded Termination, ay pangunahing ginagamit upang sumipsip ng mga signal wave na ipinadala sa dulo ng circuit, maiwasan ang pagmuni-muni ng signal na makaapekto sa circuit, at matiyak ang kalidad ng paghahatid ng circuit system.

    Ang Flanged Termination ay may katangian ng madaling pag-install kumpara sa mga patch resistors dahil sa flange nito at mga mounting hole sa flange.


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